Advanced Moisture Resistant Structure of Compound Semiconductor Integrated Circuits
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United States of America Patent
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Aug 22, 2016
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May 13, 2016
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Abstract
An advanced moisture resistant structure of compound semiconductor integrated circuit comprises a compound semiconductor substrate, a compound semiconductor epitaxial structure, a compound semiconductor integrated circuit and a moisture barrier layer. The compound semiconductor epitaxial structure is formed on the compound semiconductor substrate. The compound semiconductor integrated circuit is foimed on the compound semiconductor epitaxial structure. The moisture barrier layer is formed on the compound semiconductor integrated circuit. The moisture barrier layer is made of A12O3. The thickness of the moisture barrier layer is greater than or equal to 400 Å and less than or equal to 1000 Å so as to enhance the moisture resistant ability of the compound semiconductor integrated circuit.
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