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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
JSR CORPORATION	1-9-2 HIGASHI-SHINBASHI MINATO-KU TOKYO 105-8640

International Classification(s)

• H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

• [Classification Symbol]

• [Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
HAYAMA, Takahiro	Minato-ku, JP	17	54
KAMEI, Yasutaka	Minato-ku, JP	11	20
KAMO, Satoshi	Minato-ku, JP	19	79
NISHIGUCHI, Naoki	Minato-ku, JP	89	808
SHINODA, Tomotaka	Minato-ku, JP	26	185

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date
7.5 Year Payment	$3600.00	$1800.00	$900.00	May 16, 2025
11.5 Year Payment	$7400.00	$3700.00	$1850.00	May 16, 2029

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge - 7.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge - 11.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

Full Text

US Patent Application No: 2017/0330,762

SEMICONDUCTOR TREATMENT COMPOSITION AND TREATMENT METHOD

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