SEMICONDUCTOR LASER INCORPORATING AN ELECTRON BARRIER WITH LOW ALUMINUM CONTENT
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United States of America Patent
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Issued Date -
Nov 9, 2017
app pub date -
May 3, 2017
filing date -
May 5, 2016
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Abstract
A semiconductor laser may include a substrate, an active region, and an electron stopper layer. The electron stopper layer may include an aluminum gallium indium arsenide phosphide alloy. The aluminum gallium indium arsenide phosphide alloy may have an AlxGayIn(1-x-y)AszP(1-z) composition.
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