Single-event burnout (SEB) hardened power schottky diodes, and methods of making and using the same
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United States of America Patent
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Jan 2, 2018
Issued Date -
N/A
app pub date -
May 6, 2016
filing date -
May 6, 2016
priority date (Note) -
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Abstract
Under one aspect, a power Schottky diode includes a cathode; a semiconductor disposed over the cathode, the semiconductor including at least a first region and a second region, the second region defining a guard ring; an anode disposed over the first region and at least a portion of the guard ring, the anode including a metal, a junction between the anode and the first region defining a Schottky barrier; and an oxide disposed over the guard ring. Additionally, the power Schottky diode can include a resistive material disposed over at least a portion of the guard ring and at least a portion of the oxide. The resistive material can inhibit a flow of holes from the guard ring to the anode following a heavy ion strike to the guard ring. The anode further can be disposed over at least a portion of, or the entirety of, the resistive material.
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