EPITAXIAL WAFER, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING EPITAXIAL WAFER, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
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Nov 6, 2015
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Nov 25, 2014
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An epitaxial wafer including: a silicon-based substrate; a first buffer layer on the substrate and including a first multilayer structure buffer region composed of AlxGa1-xN layers and AlyGa1-yN layers (x>y) alternately disposed and a first insertion layer composed of an AlzGa1-zN layer (x>z) and is thicker than the AlyGa1-yN layer, the first regions and insertion layers alternately disposed; a second buffer layer on the first and including a second multilayer structure buffer region composed of AlαGa1-αN layers and AlβGa1-βN layers (α>β) alternately disposed and a second insertion layer composed of an AlγGa1-γN layer (α>γ) and is thicker than the AlβGa1-βN layer, the second regions and insertion layers alternately disposed; and a channel layer on the second buffer layer and thicker than the second insertion layer. The average Al composition in the second buffer layer is higher than that in the first.
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