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United States of America Patent

SERIAL NO

15268646

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Abstract

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Described herein are semiconductor materials suitable for direct conversion of ionizing radiation to electron hole pairs. The material described herein have improved high-flux photon counting performance and lower photocurrent leakage compared to typically used semiconductors.

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Patent Owner(s)

Patent OwnerAddress
GENERAL ELECTRIC COMPANY1 NEUMANN WAY MAIL DROP F16 EVENDALE OH 45215-6301

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Jongwoo Niskayuna, US 38 179

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