METHOD OF ETCHING ATOMIC LAYER
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United States of America Patent
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Nov 2, 2017
app pub date -
Apr 27, 2017
filing date -
Apr 27, 2016
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Abstract
The present disclosure relates to a method of etching an atomic layer, that is capable of simultaneously removing an upper surface and a side surface of an etch subject material layer by heating with a light source of a lamp when removing the atomic layer, thereby easily reducing the planar size even in the case of patterns in the scale of several nanometers.
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