METHOD FOR MANUFACTURING NITRIDE CRYSTAL SUBSTRATE AND SUBSTRATE FOR CRYSTAL GROWTH
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United States of America Patent
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Nov 2, 2017
app pub date -
May 2, 2017
filing date -
May 2, 2016
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A high-quality nitride crystal substrate is manufactured, using a substrate for crystal growth with its diameter enlarged, the nitride crystal substrate including: a first step of preparing a substrate for crystal growth having a plurality of seed crystal substrates made of nitride crystals, arranged in a planar appearance, so that their main surfaces are parallel to each other and their lateral surfaces are in contact with each other, and a difference of a lattice constant between adjacent seed crystal substrates arbitrarily selected from a plurality of the seed crystal substrates is within 7×10−5 Å; and a second step of growing a crystal film on a ground surface belonging to the substrate for crystal growth.
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