INDIUM OXIDE NANOWIRE HAVING COPPER-BASED DOPANTS, METHOD OF FORMING THE SAME AND GAS SENSOR HAVING THE SAME, AND METHOD OF FORMING NANOWIRES HAVING METAL PHTHALOCYANINE, NANOWIRE ARRANGEMENT AND GAS SENSOR HAVING THE SAME

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United States of America Patent

SERIAL NO

15523604

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Abstract

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According to embodiments of the present invention, a method of forming an indium oxide nanowire including copper-based dopants is provided. The method includes providing an indium-based precursor material and a copper-based dopant precursor material, and performing a thermal evaporation process to vapourise the indium-based precursor material and the copper-based dopant precursor material to form an indium oxide nanowire comprising copper-based dopants on a substrate. According to further embodiments of the present invention, an indium oxide nanowire including copper-based dopants and a gas sensor are also provided. According to further embodiments of the present invention, a method of forming a plurality of nanowires including metal phthalocyanine, a nanowire arrangement and a gas sensor are also provided.

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Patent Owner(s)

Patent OwnerAddress
NANYANG TECHNOLOGICAL UNIVERSITY50 NANYANG AVENUE SINGAPORE 639798

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dahiya, Abhishek Singh Singapore, SG 1 0
Lee, Pooi See Singapore, SG 34 135
Singh, Nandan Singapore, SG 1 0
Wang, Jiangxin Singapore, SG 9 35
Yan, Chaoyi Singapore, SG 17 47

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