High-voltage lateral GaN-on-silicon Schottky diode
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United States of America Patent
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May 12, 2020
Grant Date -
Oct 19, 2017
app pub date -
Jul 29, 2016
filing date -
Apr 15, 2016
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Abstract
High-voltage, gallium-nitride Schottky diodes are described that are capable of withstanding reverse-bias voltages of up to and in excess of 2000 V with reverse current leakage as low as 0.4 microamp/millimeter. A Schottky diode may comprise a lateral geometry having an anode located between two cathodes, where the anode-to-cathode spacing can be less than about 20 microns. A diode may include at least one field plate connected to the anode that extends above and beyond the anode towards the cathodes.
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