2H/1T Phase Contact Engineering for High Performance Transition Metal Dichalcogenide Chemical Vapor Sensors
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United States of America Patent
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app pub date -
Apr 4, 2017
filing date -
Apr 19, 2016
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Abstract
A method of making a low dimensional material chemical vapor sensor comprising providing a monolayer of a transition metal dichalcogenide, applying the monolayer to a substrate, applying a PMMA film, defining trenches, and placing the device in a n-butyl lithium (nbl) bath. A low dimensional material chemical vapor sensor comprising a monolayer of a transition metal dichalcogenide, the monolayer applied to a substrate, a region or regions of the transition metal dichalcogenide that have been treated with n-butyl lithium, the region or regions of the transition metal dichalcogenide that have been treated with n-butyl lithium have transitioned from a semiconducting to metallic phase, metal contacts on the region or regions of the transition metal dichalcogenide that have been treated with the n-butyl lithium.
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Family
| Country | kind | publication No. | Filing Date |
|---|---|---|---|
| WO | A1 | WO2017184331 | Apr 04, 2017 |
International Classification(s)
- 2017 Application Filing Year
- H01L Class
- 30754 Applications Filed
- 25260 Patents Issued To-Date
- 82.14 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 3 Citation Count
- H01L Class
- 18.50 % this patent is cited more than
- 8 Age