GERMANIUM COMPOSITIONS SUITABLE FOR ION IMPLANTATION TO PRODUCE A GERMANIUM-CONTAINING ION BEAM CURRENT
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Apr 10, 2017
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Apr 11, 2016
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The present invention relates to an improved composition for ion implantation. A dopant source comprising GeF4 and an assistant species comprising CH3F is provided, wherein the assistant species in combination with the dopant gas can produces a Ge-containing ion beam current. The criteria for selecting the assistant species is based on the combination of the following properties: ionization energy, total ionization cross sections, bond dissociation energy to ionization energy ratio, and a certain composition.
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