DECODING METHOD, MEMORY STORAGE DEVICE AND MEMORY CONTROL CIRCUIT UNIT

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United States of America Patent

SERIAL NO

15170931

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Abstract

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A decoding method, a memory storage device and a memory control circuit unit are provided. The method includes: reading data from a plurality of first memory cells of a rewritable non-volatile memory module; estimating an error bit occurrence rate of the data before performing a first decoding process on the data; and performing the first decoding process on the data by using a first decoding parameter according to the estimated error bit occurrence rate, wherein the first decoding parameter corresponds to a strict level for locating an error bit in the first decoding process. As a result, a decoding efficiency of the memory storage device can be improved.

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Patent Owner(s)

Patent OwnerAddress
PHISON ELECTRONICS CORPNO 1 QUN YI RD JHUNAN MIAOLI 350

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lai, Kuo-Hsin Hsinchu County, TW 32 399
Lin, Yu-Hsiang Yunlin County, TW 161 478
Yang, Cheng-Che New Taipei City, TW 8 142
Yen, Shao-Wei Kaohsiung City, TW 15 108

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