Using aluminum as etch stop layer

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United States of America Patent

PATENT NO 10873023
APP PUB NO 20170288139A1
SERIAL NO

15468847

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Abstract

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A two-terminal resistive switching device (TTRSD) such as a non-volatile two-terminal memory device or a volatile two-terminal selector device can be formed according to a manufacturing process. The process can include forming an etch stop layer that is made of aluminum and can include forming a buffer layer below the etch stop layer and/or between the etch stop layer and a top electrode of the TTRSD.

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Patent Owner(s)

  • CROSSBAR INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gu, Zhen Cupertino, US 88 100
Narayanan, Sundar Cupertino, US 43 303
Vasquez, Natividad San Francisco, US 13 162
Wang, Yunyu San Jose, US 16 3133

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