Trenched MOS gate controlled rectifier
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United States of America Patent
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Dec 1, 2020
Grant Date -
Oct 5, 2017
app pub date -
Apr 1, 2016
filing date -
Apr 1, 2016
priority date (Note) -
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Abstract
A trenched MOS gate controlled rectifier has an asymmetric trench structure between the active area of active trenches and the termination area of termination trenches. The asymmetric trench structure has a gate electrode on one side of the trench to turn on and off the channel of the MOS structure effectively and a field plate structure on the other side with field dielectric sufficiently thick in order to sustain the high electric field during the reverse bias condition.
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