SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD FOR SAME
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Aug 6, 2015
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Aug 29, 2014
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A semiconductor element includes a high-resistivity substrate that includes a β-Ga2O3-based single crystal including an acceptor impurity, an undoped β-Ga2O3-based single crystal layer formed on the high-resistivity substrate, and an n-type channel layer that includes a side surface surrounded by the undoped β-Ga2O3-based single crystal layer. The undoped β-Ga2O3-based single crystal layer includes an element isolation region.
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