METHOD OF FORMING SIGE CHANNEL FORMATION REGION
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United States of America Patent
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app pub date -
Apr 1, 2016
filing date -
Apr 1, 2016
priority date (Note) -
Abandoned
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Abstract
A method comprising: forming an SiGe layer on sidewalls of one or more fins of a semiconductor device by a non-selective deposition of amorphous SiGe, the fins being formed of Si or SiGe; depositing a silicon oxide layer over the SiGe layer; and forming an SiGe channel formation region within each fin by performing Ge enrichment to diffuse Ge atoms from the SiGe layer into the one or more fins.
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Patent Citation Ranking
- 3 Citation Count
- H01L Class
- 18.50 % this patent is cited more than
- 8 Age