Domain wall magnetic memory

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9871076
SERIAL NO

15091551

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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Devices and methods of forming a device are disclosed. The method includes providing a substrate with a cell region. Selector units and storage units are formed within the substrate. The selector unit includes first and second bipolar junction transistors (BJTs). The selector unit includes first and second bipolar junction transistors (BJTs). A BJT includes first, second and third BJT terminals. The second BJT terminals of the first and second BJTs are coupled to or serve as a common wordline terminal. The third BJT terminal of the first BJT serves as a first bitline terminal, and the third BJT terminal of the second BJT serves as a second bitline terminal. A storage unit is disposed over the selector unit. The storage unit includes a first pinning layer which is coupled to the first BJT terminal of the first BJT, a second pinning layer which is coupled to the first BJT terminal of the second BJT, a free layer which includes an elongated member with first and second major surfaces and first and second end regions separated by a free region. The first pinning layer is coupled to the second major surface of the free layer in the first end region and the second pinning layer is coupled to the second major surface of the free layer in the second end region. A reference stack is disposed on the first major surface of the free layer in the free region. The reference stack serves as a read bitline terminal.

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First Claim

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Patent Owner(s)

Patent OwnerAddress
GLOBALFOUNDRIES SINGAPORE PTE LTD60 WOODLANDS INDUSTRIAL PARK D STREET 2 SINGAPORE 738406

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Quek, Kiok Boone Elgin Singapore, SG 80 357
Toh, Eng Huat Singapore, SG 256 1730
Tran, Xuan Anh Singapore, SG 22 119

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