VARIABLE BURIED OXIDE THICKNESS FOR SILICON-ON-INSULATOR DEVICES
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Mar 31, 2017
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Mar 31, 2016
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Variable buried oxide thickness for silicon-on-insulator devices. In some embodiments, a radio-frequency device can include a silicon-on-insulator substrate having an insulator layer and a handle wafer. The radio-frequency device can further include a plurality of field-effect transistors implemented over the insulator layer. Each transistor can be separated from the handle wafer by a corresponding portion of the insulator layer. The corresponding portion of the insulator layer can have an average thickness value such that the average thickness values associated with the plurality of FETs transistors form a non-uniform distribution.
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