VARIABLE HANDLE WAFER RESISTIVITY FOR SILICON-ON-INSULATOR DEVICES
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United States of America Patent
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Mar 31, 2017
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Mar 31, 2016
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Variable handle wafer resistivity for silicon-on-insulator devices. In some embodiments, a radio-frequency device can include a silicon-on-insulator substrate having an insulator layer and a handle wafer. The radio-frequency device can further include a plurality of field-effect transistors implemented over the insulator layer to cover a corresponding portion of the handle wafer having a non-uniform distribution of resistivity values.
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