Non-symmetric body contacts for field-effect transistors
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United States of America Patent
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Nov 24, 2020
Grant Date -
Oct 5, 2017
app pub date -
Mar 31, 2017
filing date -
Mar 31, 2016
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Abstract
Field-effect transistor (FET) devices are described herein that include one or more body contacts implemented near source, gate, drain (S/G/D) assemblies to improve the influence of a voltage applied at the body contact on the S/G/D assemblies. For example, body contacts can be implemented between S/G/D assemblies rather than on the ends of such assemblies. This can advantageously improve body contact influence on the S/G/D assemblies while maintaining a targeted size for the FET device.
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