Method of manufacturing semiconductor device

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United States of America Patent

PATENT NO 10622213
APP PUB NO 20170287716A1
SERIAL NO

15623887

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Abstract

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A method of manufacturing a semiconductor device, includes rotating a substrate support tool accommodated in a process chamber and configured to support a substrate with a rail, and supplying a process gas including a first gas to the substrate from a first gas supply hole positioned at an outer side of the substrate in a horizontal direction while rotating the substrate support tool. In the act of supplying the process gas, the first gas is supplied to the substrate in a first period in which the rail is not positioned between the first gas supply hole and the substrate in the horizontal direction.

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Patent Owner(s)

Patent OwnerAddress
KOKUSAI ELECTRIC CORPORATION3-4 KANDAKAJI-CHO CHIYODA-KU TOKYO 101-0045

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kaga, Yukinao Toyama, JP 37 425

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