Semiconductor element and crystalline laminate structure
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United States of America Patent
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Dec 8, 2020
Grant Date -
Sep 28, 2017
app pub date -
Aug 18, 2015
filing date -
Aug 29, 2014
priority date (Note) -
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status (Latency Note)
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Abstract
A semiconductor element includes a high-resistivity substrate that includes a β-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a β-Ga2O3-based single crystal, and a channel layer on the buffer layer, the channel layer including a β-Ga2O3-based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a β-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a β-Ga2O3-based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a β-Ga2O3-based single crystal including a donor impurity.
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- 41.95 % this patent is cited more than
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