Semiconductor element and crystalline laminate structure

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United States of America Patent

PATENT NO 10861945
APP PUB NO 20170278933A1
SERIAL NO

15507158

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A semiconductor element includes a high-resistivity substrate that includes a β-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a β-Ga2O3-based single crystal, and a channel layer on the buffer layer, the channel layer including a β-Ga2O3-based single crystal including a donor impurity. A crystalline laminate structure includes a high-resistivity substrate that includes a β-Ga2O3-based single crystal including an acceptor impurity, a buffer layer on the high-resistivity substrate, the buffer layer including a β-Ga2O3-based single crystal, and a donor impurity-containing layer on the buffer layer, the donor impurity-containing layer including a β-Ga2O3-based single crystal including a donor impurity.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY4-2-1 NUKUI-KITAMACHI KOGANEI-SHI TOKYO 1848795
TAMURA CORPORATION1-19-43 HIGASHI-OIZUMI NERIMA-KU TOKYO 1788511
NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY3-8-1 HARUMI-CHO FUCHU-SHI TOKYO 183-8538

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Goto, Ken Tokyo, JP 30 470
Higashiwaki, Masataka Koganei, JP 20 209
Koukitu, Akinori Fuchu, JP 38 242
Kumagai, Yoshinao Fuchu, JP 28 183
Murakami, Hisashi Fuchu, JP 32 266
Sasaki, Kohei Tokyo, JP 52 293
Wong, Man Hoi Koganei, JP 6 123

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