Platform of large metal nitride islands with lateral orientations and low-defect density
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 1, 2020
Grant Date -
Sep 28, 2017
app pub date -
Mar 17, 2017
filing date -
Mar 22, 2016
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention provides a metal nitride platform for semiconductor devices, including, a pre-defined array of catalyst sites, disposed on a substrate. Metal nitride islands with lateral to vertical size ratios of at least greater than one (1) are disposed on the array of catalyst sites, where the surfaces of the metal nitride islands are with reduced dislocation densities and side walls with bending of dislocations. The platform of metal nitride islands is further used to build electrically and optically-active devices. The present invention also provides a process for the preparation of a metal nitride platform, selectively, on the array of catalyst sites, in the presence of a reactive gas and precursors and under preferred reaction conditions, to grow metal nitride islands with lateral to vertical size ratios of at least greater than one (1).
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully