THERMAL-AWARE FINFET DESIGN
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Mar 17, 2016
filing date -
Mar 17, 2016
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
According to various aspects, a thermal-aware finned field-effect transistor (FinFET) may have a design that can substantially reduce hot spot temperatures and resolve other self-heating problems. More particularly, the FinFET design may use aluminum nitride (AlN) fins that can provide a main thermal exit and a source, drain, and channel formed from materials that can spread or dissipate heat, wherein AlN has a high thermal conductivity compared to silicon such that using AlN to form the fins may substantially increase heat flux to a silicon substrate relative to silicon fins. Furthermore, thermal-efficient materials may be used to form the source, drain, and channel structures to further spread heat and decrease hot spot temperatures.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully