SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Mar 15, 2017
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Mar 16, 2016
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Provided is a semiconductor device including a second conductivity type low-concentration diffusion layer (101) for an electric field relaxation reaching a lower portion of a gate oxide film so as to cover a drain diffusion layer (107), in which a second conductivity type medium-concentration diffusion layer (102) is formed within the second conductivity type low-concentration diffusion layer (101) for the electric field relaxation, and a second conductivity type high-concentration diffusion layer (103), which has a high concentration and small variation in structure due to suppression of heat treatment as much as possible, is formed within the second conductivity type medium-concentration diffusion layer (102).
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