SEMICONDUCTOR DEVICE
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United States of America Patent
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app pub date -
Aug 25, 2016
filing date -
Mar 16, 2016
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Abstract
A semiconductor device includes a silicon carbide layer having first and second surfaces. The layer includes a first conductivity type first region extending from the first surface to the second surface, a second conductivity type second region extending inwardly of the first surface and surrounding a portion of the first region, and a second conductivity type third region surrounding the second region. The third region has an impurity concentration lower than the impurity concentration of the second region. The semiconductor device includes a first electrode extending over the portion of the first region and a portion of the second region, a first insulating layer extending over the third region and partially over the second region, and a second insulating layer overlying the first insulating layer and having a first portion and a second portion thicker than the first portion overlying the boundary between the second and third regions.
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