Anti-Reflective Treatment Of The Rear Side Of A Semiconductor Wafer

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United States of America Patent

SERIAL NO

15502212

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A method for producing a semiconductor wafer, in which an optical anti-reflective layer (4) is formed on the backside of the wafer in order to optimize optical access (17) to or from CMOS devices (10) through the backside (32) of the wafer (1). The CMOS devices (10) are produced only after formation of an anti-reflective layer (4), the etching stop layers (5, 6) formed thereon, the bonding layer (7) and the carrier wafer (8) bonded thereto. After formation of the CMOS devices, the etching stop layers (5, 6), the bonding layer (7) and the bonded carrier wafer (8) are thinned and removed, at least selectively, by grinding or by means of lithography (16) or masked etching.

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Patent OwnerAddress
X-FAB SEMICONDUCTOR FOUNDRIES GMBHHAARBERGSTR 67 ERFURT 99097

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
GAEBLER, Daniel Sulzbach, DE 14 43

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