Method of manufacturing semiconductor device, substrate processing apparatus and recording medium
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United States of America Patent
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Aug 25, 2020
Grant Date -
Sep 21, 2017
app pub date -
Mar 13, 2017
filing date -
Mar 18, 2016
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Abstract
A method of manufacturing a semiconductor device, includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing (a) supplying a precursor containing a first element to the substrate, (b) supplying a plasma-excited nitrogen gas to the substrate after the act (a), (c) supplying a reactant containing a second element to the substrate after the act (b), and (d) supplying a plasma-excited nitrogen gas to the substrate after the act (c). A gas purge of a space where the substrate is located and vacuumization of the space without gas supply are not performed between the act (a) and the act (b) and between the act (c) and the act (d).
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