Molten target sputtering (MTS) deposition for enhanced kinetic energy and flux of ionized atoms
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United States of America Patent
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Mar 16, 2021
Grant Date -
Sep 21, 2017
app pub date -
Mar 20, 2017
filing date -
Mar 18, 2016
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Various embodiments provide Molten Target Sputtering (MTS) methods and devices. The various embodiments may provide increases in the kinetic energy, increases in the energy latency, and/or increases in the flux density of molecules for better crystal formation at low temperature operation. The various embodiment MTS methods and devices may enable the growth of a single crystal Si1-xGex film on a substrate heated to less than about 500° C. The various embodiment MTS methods and devices may provide increases in the kinetic energy, increases in the energy latency, and/or increases in the flux density of molecules without requiring the addition of extra systems.
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International Classification(s)
- 2017 Application Filing Year
- C23C Class
- 3339 Applications Filed
- 2148 Patents Issued To-Date
- 64.34 % Issued To-Date
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- 0 Citation Count
- C23C Class
- 0 % this patent is cited more than
- 4 Age
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