Semiconductor device manufacturing method, substrate processing apparatus and recording medium
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United States of America Patent
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Sep 15, 2020
Grant Date -
Sep 21, 2017
app pub date -
Mar 14, 2017
filing date -
Mar 18, 2016
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Abstract
A substrate processing apparatus includes: a reaction tube with a process chamber defined therein, the process chamber being configured to process a substrate; a heating device configured to heat the process chamber; a gas supply part configured to supply a process gas used in processing the substrate; and a plasma generating part including an electrode composed of a first electrode portion connected to a high frequency power supply and a second electrode portion grounded to the earth, which are installed to surround the entire circumference of an outer wall of the reaction tube. An inter-electrode distance between the first electrode portion and the second electrode portion is determined by at least a frequency of the high frequency power supply and a voltage applied across the electrode. The first and second electrode portions are installed based on the determined inter-electrode distance.
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