METHOD OF MANUFACTURING MAGNETORESISTIVE MEMORY DEVICE
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United States of America Patent
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app pub date -
Aug 9, 2016
filing date -
Mar 11, 2016
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Abandoned
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Abstract
According to one embodiment, a method of manufacturing a magnetoresistive memory device includes forming a mask on a stacked layer structure disposed on a substrate and constituting a plurality of magnetoresistive elements, etching the stacked layer structure selectively into a plurality of pillars corresponding to the mask by applying an ion beam at a first angle relative to a perpendicular direction to a surface of the substrate, removing deposited films attached to sidewalls of the pillars by applying an ion beam at a second angle greater than the first angle, and etching bottom portions of the pillars by applying an ion beam at a third angle less than the second angle.
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