SEMICONDUCTOR DEVICE
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United States of America Patent
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app pub date -
Jan 18, 2017
filing date -
Mar 14, 2016
priority date (Note) -
Abandoned
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Abstract
A semiconductor device includes a first gate electrode on a substrate, a first trench on a first side of the first gate electrode, a second trench on a second side of the first gate electrode, a depth of the second trench being greater than a depth of the first trench, a first source/drain filling the first trench, and a second source/drain filling the second trench, a height of an upper surface of the second source/drain being greater than a height of the first source/drain.
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