Importance

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Abstract

A semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer on the first nitride semiconductor layer, a source electrode on the second nitride semiconductor layer and spaced from the source electrode, a drain electrode on the second nitride semiconductor layer and spaced from the source electrode, a gate electrode between the drain and source electrodes, an interlayer insulating film on the second nitride semiconductor layer, a first field plate electrode in contact with an upper surface of the second nitride semiconductor layer at a location between the gate and drain electrodes, and a second field plate electrode extending through the interlayer insulating film and connected to the first field plate electrode. An end of the second field plate electrode on the source electrode side is closer to the drain electrode than is an end of the first field plate electrode on the source electrode side.

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First Claim