Method of manufacturing a structure having one or several strained semiconducting zones that may for transistor channel regions
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United States of America Patent
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May 26, 2020
Grant Date -
Sep 14, 2017
app pub date -
Mar 13, 2017
filing date -
Mar 14, 2016
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Abstract
The method of manufacturing a structure comprising one or several strained semiconducting zones capable of forming one or several transistor channel regions, the method including the following steps:
- a) providing a substrate coated with a masking layer wherein there are one or several first slits exposing one or several first oblong semiconducting portions made of a first semiconducting material and extending in a first direction,b) making a second semiconducting material grow with a mesh parameter different from the mesh parameter of the first semiconducting material, so as to form one or several first semiconducting blocks strained along the first direction, on said one or several first oblong semiconducting portions.
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