SEMICONDUCTOR MEMORY DEVICE

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20170263325A1
SERIAL NO

15261487

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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According to one embodiment, a semiconductor memory device includes a first transistor which includes a first end coupled to a first node, a second end, and a gate coupled to the second end. A second transistor includes a third end coupled to the first node, a fourth end, and a gate coupled to the fourth end. A third transistor is provided between a first bit line and a second node in a first sense amplifier. A selector is configured to supply a gate of the third transistor with one of a potential of the second end and a potential of the fourth end.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBAKANAGAWA KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
ABIKO, Naofumi Kawasaki Kanagawa, JP 39 816
KAMATA, Yoshihiko Yokohama Kanagawa, JP 69 278
SAKO, Mario Yokohama Kanagawa, JP 30 144
WATANABE, Toshifumi Yokohama Kanagawa, JP 70 575

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