Projection lens for EUV microlithography, film element and method for producing a projection lens comprising a film element

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United States of America Patent

PATENT NO 10001631
APP PUB NO 20140347721A1
SERIAL NO

14454939

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Abstract

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A film element of an EUV-transmitting wavefront correction device is arranged in a beam path and includes a first layer of first layer material having a first complex refractive index n1=(1−δ1)+iß1, with a first optical layer thickness, which varies locally over the used region in accordance with a first layer thickness profile, and a second layer of second layer material having a second complex refractive index n2=(1−δ2)+iß2, with a second optical layer thickness, which varies locally over the used region in accordance with a second layer thickness profile. The first and second layer thickness profiles differ. The deviation δ1 of the real part of the first refractive index from 1 is large relative to the absorption coefficient ß1 of the first layer material and the deviation δ2 of the real part of the second refractive index from 1 is small relative to the absorption coefficient ß2 of the second layer material.

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Patent Owner(s)

Patent OwnerAddress
CARL ZEISS SMT GMBHGERMANY COHEN OBERKOCHEN BADEN-WURTTEMBERG

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bittner, Boris Roth, DE 45 321
Gruner, Toralf Aalen-Hofen, DE 173 1727
Iliew, Rumen Oberkochen, DE 4 22
Pauls, Walter Huettlingen, DE 12 31
Roesch, Matthias Aalen, DE 7 59
Schicketanz, Thomas Aalen, DE 30 92
Schmidt, Holger Aalen, DE 158 1642
Schneider, Sonja Oberkochen, DE 26 89
Schoemer, Ricarda Maria Zusmarshausen, DE 1 2
Wabra, Norbert Werneck, DE 58 344
Wagner, Hendrik Aalen, DE 38 729
Wald, Christian Aalen, DE 18 128

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