BI-MATERIAL TERAHERTZ SENSOR AND TERAHERTZ EMITTER USING METAMATERIAL STRUCTURES
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United States of America Patent
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app pub date -
Dec 22, 2015
filing date -
Mar 28, 2012
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Abstract
Bi-material terahertz (THz) sensors with metamaterial structures are described. In one embodiment, MEMS fabrication-friendly SiOx and Al are used to maximize the bi-material effect and metamaterial absorption at 3.8 THz, the frequency of a quantum cascade laser illumination source. Sensors with different configurations were fabricated and the measured absorption is near 100% and responsivity is around 1.2 deg/μW. Fabrication and use of the sensors in focal plane arrays for real time THz imaging is described. In a further embodiment, the metamaterial structure is utilized as a THz emitter when heated by an external source.
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