System and method for producing group 13 nitride crystals comprised of growth vessels stacked within inner vessels placed over support tables with a central rotating shaft and revolving shafts attached to the support tables
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United States of America Patent
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Nov 27, 2018
Grant Date -
Sep 14, 2017
app pub date -
May 25, 2017
filing date -
Nov 26, 2014
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Abstract
A crystal growth apparatus includes a pressure-resistant vessel; a plurality of support tables arranged inside the pressure-resistant vessel; inner vessels each placed over the support tables, respectively; growth vessels contained the inner vessels, respectively; a heating means for heating the growth vessels; and a central rotating shaft connected to the support tables. The central rotating shaft is distant from central axes of the inner vessels, respectively. A seed crystal, a raw material of the Group 13 element and a flux are charged in each of the growth vessels, and the growth vessels are heated to form a melt and a nitrogen-containing gas is supplied to the melt to grow a crystal of a nitride of said Group 13 element while the central rotating shaft is rotated.
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