Solution deposition method for forming metal oxide or metal hydroxide layer
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United States of America Patent
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Oct 23, 2018
Grant Date -
Sep 14, 2017
app pub date -
May 26, 2017
filing date -
Nov 10, 2014
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Abstract
A solution deposition method includes: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site.
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