NITRIDE SEMICONDUCTOR STRUCTURE

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United States of America Patent

APP PUB NO 20170256673A1
SERIAL NO

15499913

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Abstract

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A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. One well layer is disposed between every two barrier layers. The barrier layer is made of AlxInyGa1-x-yN (0zGa1-zN (0

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Patent Owner(s)

Patent OwnerAddress
GENESIS PHOTONICS INCNO 31 SEC 2 HUANDONG RD SHANHUA DIST TAINAN CITY 741014

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lai, Yen-Lin New Taipei City, TW 43 48
Wang, Shen-Jie New Taipei City, TW 38 95

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