SEMICONDUCTOR EPITAXIAL WAFER AND METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING SOLID-STATE IMAGE SENSING DEVICE

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United States of America Patent

SERIAL NO

15506457

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Abstract

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To provide a semiconductor epitaxial wafer having an epitaxial layer with excellent crystallinity, the semiconductor epitaxial wafer is a semiconductor epitaxial wafer in which an epitaxial layer is formed on a surface of a semiconductor wafer, and the peak of the hydrogen concentration profile detected by SIMS lies in a surface portion of the semiconductor wafer on the side where the on the side where the epitaxial layer is formed.

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SUMCO CORPORATION2-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 105-8634

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KADONO, Takeshi Tokyo, JP 28 68
KURITA, Kazunari Tokyo, JP 51 271
OKUYAMA, Ryosuke Tokyo, JP 10 11

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