GRAPHENE-SEMICONDUCTOR SCHOTTKY JUNCTION PHOTODETECTOR OF HAVING TUNABLE GAIN
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United States of America Patent
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Sep 7, 2017
app pub date -
Feb 23, 2017
filing date -
Mar 2, 2016
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Abstract
Disclosed herein is a photodetector utilizing graphene. A single-layer graphene channel is formed on a semiconductor substrate doped with n-type impurity. The graphene channel has an end connected to a source electrode and is physically separated from a drain electrode. Light having passed through a gate insulation layer and a gate electrode generates electron-hole pairs at the interface between the graphene channel and the semiconductor substrate forming a Schottky junction, and a photocurrent is generated by a Schottky barrier. In addition, the Schottky barrier is changed according to an applied gate voltage, thereby changing the photocurrent.
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