SEMICONDUCTOR MEMORY DEVICE
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United States of America Patent
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app pub date -
Sep 16, 2016
filing date -
Mar 3, 2016
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Abstract
A semiconductor memory device includes electrode layers stacked on a conductive layer, and columnar bodies extending in the electrode layers in a stacked direction of the electrode layers. The electrode layers include a first electrode layer and a second electrode layer positioned between the first electrode layer and the conductive layer. The columnar bodies include a first columnar body and a second columnar body. The first columnar body includes a first semiconductor layer extending in the stacked direction through the first electrode, a semiconductor body provided between the first semiconductor layer and the conductive layer, and a first insulating layer extending along the first semiconductor layer. The second columnar body includes a second semiconductor layer extending in the stacked direction through at least the first electrode layer, and a second insulating layer extending in the stacked direction along the second semiconductor layer and extending through the second electrode layer.
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