EMISSIVITY, SURFACE FINISH AND POROSITY CONTROL OF SEMICONDUCTOR REACTOR COMPONENTS
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United States of America Patent
Stats
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N/A
Issued Date -
Sep 7, 2017
app pub date -
May 16, 2017
filing date -
Jul 6, 2015
priority date (Note) -
Published
status (Latency Note)
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Abstract
An apparatus and methods are provided related to a surface of a reaction chamber assembly component. The surface may be roughened and/or anodized to provide desirable emissivity and porosity to help reduce burn-in time of a reaction chamber and to help reduce particles within the chamber. The apparatus and methods may be suitable for thin film deposition on semiconductor or other substrates.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
ASM IP HOLDING B V | VERSTERKERSTRAAT 8 ALMERE 1322 AP |
International Classification(s)

- 2017 Application Filing Year
- C23C Class
- 3339 Applications Filed
- 2148 Patents Issued To-Date
- 64.34 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Shugrue, John Kevin | Phoenix, US | 20 | 2767 |
# of filed Patents : 20 Total Citations : 2767 | |||
White, Carl Louis | Phoenix, US | 36 | 4417 |
# of filed Patents : 36 Total Citations : 4417 |
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Patent Citation Ranking
- 0 Citation Count
- C23C Class
- 0 % this patent is cited more than
- 8 Age
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