PATTERN-FORMING METHOD
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United States of America Patent
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Mar 2, 2016
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Mar 2, 2016
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A pattern-forming method enables a resist pattern having a favorable shape with a desired size to be conveniently formed while generation of defects is inhibited, and by using such a superior resist pattern as a mask, a pattern having a favorable shape and arrangement can be formed. The pattern-forming method including: overlaying a base pattern on a front face side of a substrate directly or via other layer; applying a first composition on at least a lateral face of the base pattern; forming a polymer layer by graft polymerization on a surface of the coating film formed after the applying; and etching the substrate by one or a plurality of etching operations by using a resist pattern that includes the base pattern, the coating film and the polymer layer.
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