Image sensor and method of manufacturing the same

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United States of America Patent

PATENT NO 10615201
APP PUB NO 20170250214A1
SERIAL NO

15421718

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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In manufacturing an image sensor for FPD having an oxide semiconductor TFT as a switching element, a large amount of hydrogen contained in raw gas is diffused in the oxide semiconductor at the time of forming a-Si photo diode (PD) which is a photoelectric conversion element, causing significant variation in the characteristic of TFT which may thereby not operate. In an image sensor in which an oxide semiconductor TFT and a-Si PD are formed on a substrate in this order, a gas barrier film is disposed between the oxide semiconductor TFT and the PD, and the drain terminal (drain metal) of the oxide semiconductor TFT is connected to one terminal (lower electrode) of the PD via connection wiring (bridge wiring) formed on a protective film arranged over the PD.

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Patent Owner(s)

Patent OwnerAddress
TIANMA MICROELECTRONICS CO LTDROOM 1918 TIANMA BUILDING LIUXIAN AVE NORTH STATION COMMUNITY MINZHI STREET LONGHUA DISTRICT SHENZHEN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hatazawa, Yoshikazu Kanagawa, JP 4 39
Ishino, Takayuki Kanagawa, JP 36 312
Sekine, Hiroyuki Kanagawa, JP 83 632
Tamura, Fuminori Kanagawa, JP 11 77
Yamamoto, Yusuke Kanagawa, JP 166 809

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