ULTRA-HIGH DENSITY SINGLE-WALLED CARBON NANOTUBE HORIZONTAL ARRAY AND ITS CONTROLLABLE PREPARATION METHOD

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United States of America Patent

SERIAL NO

15523341

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Abstract

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The present invention discloses single-walled carbon nanotubes horizontal arrays with ultra-high density and the preparation method. The method comprises the following steps: loading a catalyst on a single crystal growth substrate; after annealing, introducing hydrogen into a chemical vapor deposition system to conduct a reduction reaction of the catalyst; and maintaining the introduction of the hydrogen to conduct the orientated growth of a single-walled carbon nanotube. The density of the ultra-high density single-walled carbon nanotube horizontal array obtained by this method exceeds 130 tubes/micrometer, and an electrical performance test is performed on the prepared ultra-high density single-walled carbon nanotube horizontal array shows a high on-current density of 380 μA/μm, and the transconductance of 102.5 μS/μm.

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Patent Owner(s)

Patent OwnerAddress
PEKING UNIVERSITY100871 NO 5 THE SUMMER PALACE ROAD BEIJING HAIDIAN DISTRICT BEIJING CITY BEIJING CITY 100871

International Classification(s)

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  • 2014 Application Filing Year
  • C23C Class
  • 2649 Applications Filed
  • 2034 Patents Issued To-Date
  • 76.79 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2014201520162017201820192020202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HU, Yue Beijing, CN 84 319
KANG, Lixing Beijing, CN 1 1
ZHANG, Jin Beijing, CN 374 2212
ZHANG, Shuchen Beijing, CN 4 2
ZHAO, Qiuchen Beijing, CN 1 1

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  • 1 Citation Count
  • C23C Class
  • 27.20 % this patent is cited more than
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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges4219241045322915232201 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +0501001502002503003504004505005506006507007508008509009501000

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