ULTRA-HIGH DENSITY SINGLE-WALLED CARBON NANOTUBE HORIZONTAL ARRAY AND ITS CONTROLLABLE PREPARATION METHOD
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United States of America Patent
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app pub date -
Nov 21, 2014
filing date -
Oct 29, 2014
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Abstract
The present invention discloses single-walled carbon nanotubes horizontal arrays with ultra-high density and the preparation method. The method comprises the following steps: loading a catalyst on a single crystal growth substrate; after annealing, introducing hydrogen into a chemical vapor deposition system to conduct a reduction reaction of the catalyst; and maintaining the introduction of the hydrogen to conduct the orientated growth of a single-walled carbon nanotube. The density of the ultra-high density single-walled carbon nanotube horizontal array obtained by this method exceeds 130 tubes/micrometer, and an electrical performance test is performed on the prepared ultra-high density single-walled carbon nanotube horizontal array shows a high on-current density of 380 μA/μm, and the transconductance of 102.5 μS/μm.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
PEKING UNIVERSITY | 100871 NO 5 THE SUMMER PALACE ROAD BEIJING HAIDIAN DISTRICT BEIJING CITY BEIJING CITY 100871 |
International Classification(s)

- 2014 Application Filing Year
- C23C Class
- 2649 Applications Filed
- 2034 Patents Issued To-Date
- 76.79 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
HU, Yue | Beijing, CN | 84 | 319 |
# of filed Patents : 84 Total Citations : 319 | |||
KANG, Lixing | Beijing, CN | 1 | 1 |
# of filed Patents : 1 Total Citations : 1 | |||
ZHANG, Jin | Beijing, CN | 374 | 2212 |
# of filed Patents : 374 Total Citations : 2212 | |||
ZHANG, Shuchen | Beijing, CN | 4 | 2 |
# of filed Patents : 4 Total Citations : 2 | |||
ZHAO, Qiuchen | Beijing, CN | 1 | 1 |
# of filed Patents : 1 Total Citations : 1 |
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Patent Citation Ranking
- 1 Citation Count
- C23C Class
- 27.20 % this patent is cited more than
- 8 Age
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