Fin formation for semiconductor device
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United States of America Patent
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Issued Date -
Aug 17, 2017
app pub date -
Feb 12, 2016
filing date -
Feb 12, 2016
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Abstract
A method of fabricating a semiconductor structure includes forming a plurality of semiconductor fins disposed on a semiconductor substrate, wherein at least one of the fins is an unwanted fin including a semiconductor material; providing a conformal protective layer over the plurality of semiconductor fins; forming a mask having an opening over the unwanted fin; removing a portion of the unwanted fin to expose a fin spike; oxidizing the fin spike to form an oxidized semiconductor material; and removing the oxidized semiconductor material to expose a fin base.
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